One of the consequences of the energy loss is the promotion of bound outer shell valence electrons to the conduction band of the semiconductor, leaving behind positively charged “holes” in the valence band. The ejected photoelectron undergoes inelastic scattering within the Si crystal. The entire energy of the photon is transferred to a bound inner shell atomic electron, which is ejected with kinetic energy equal to the photon energy minus the shell ionization energy (binding energy), 1.838 keV for the Si K-shell and 0.098 keV for the Si L-shell. 16.1, the physical basis of energy dispersive X-ray spectrometry (EDS) with a semiconductor detector begins with photoelectric absorption of an X-ray photon in the active volume of the semiconductor (Si).
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